Magnachip Launches New 24V BatteryFET for Tri-Fold Smartphone Battery Protection
– Achieves a 26% reduction in chip size and a 31% improvement in Rss(on) based on Super-Short Channel FET technology
– Expands battery protection solutions for a wide range of mobile devices.
SEOUL, South Korea–(BUSINESS WIRE)–#BatteryFET–Magnachip Semiconductor Corporation (NYSE: MX, “Magnachip”) today announced the launch of its new 7th-generation 24V MXT LV MOSFET1 specifically designed for battery protection circuits in next-generation tri-fold smartphones, strengthening its presence in the premium foldable smartphone market. The product is now in mass production and is currently being supplied to a major global smartphone manufacturer, having demonstrated proven performance and reliability.
The newly introduced 24V Dual N-channel MOSFET (MDWC24D058ERH) incorporates Magnachip’s proprietary Super-Short Channel FET (SSCFET®)2 technology, reducing chip size by approximately 26% compared to the previous version. This enables manufacturers to reduce the footprint of the battery protection circuit module (PCM) board by more than 20%, allowing the saved space to be used for increased battery capacity or slimmer device designs.
Tri-fold smartphones feature a new form factor that folds twice and operates three displays simultaneously, enabling high-performance multitasking. As a result, their internal structures have become more complex, power-efficient and reliable, while also becoming increasingly critical in design. Accordingly, these devices demand highly integrated and efficient MOSFET solutions to manage complex internal structures while ensuring power stability.
In addition to tri-fold smartphones, the new product can be applied across a wide range of mobile applications, including wearable devices and tablets. It reduces RSS(on), a major source of power loss, by up to approximately 31%, helping to reduce heat generation. The new product also improves current density per unit area by approximately 48% compared to conventional trench processes, supporting stable voltage control under high-current conditions. In addition, it integrates electrostatic discharge (ESD) protection of more than 2kV, helping to safeguard battery systems from external disturbances.
According to market research firm Omdia, the market for silicon power MOSFETs below 40V, including smartphone batteryFETs, is expected to grow from approximately $4.2 billion in 2025 to approximately $5.2 billion in 2029, representing a compound annual growth rate of about 4.6%. Within this market, the premium smartphone segment, including tri-fold smartphones, is expected to drive growth, supported by increasing demand for high-performance and high-efficiency components.
“Tri-fold smartphones represent high-end mobile devices that require advanced technology and superior component reliability,” said Hyuk Woo, Chief Technology Officer of Magnachip. “Through the supply of this new MOSFET product, we have once again demonstrated Magnachip’s power semiconductor design capabilities and technological competitiveness. Going forward, we will continue to expand our power semiconductor portfolio for a wide range of mobile applications, including smartphones, wearables, and tablets, through ongoing innovation.”
Related Links
Power Solutions > MXT MOSFETs > 24V
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Magnachip Expands Production of 7th-Generation MXT LV MOSFETs Based on Super Short Channel FET Technology
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About Magnachip Semiconductor
Magnachip is a designer and manufacturer of analog and mixed-signal power semiconductor platform solutions for various applications, including industrial, automotive, communication, consumer and computing. The Company provides a broad range of standard products to customers worldwide. Magnachip, with about 45 years of operating history, owns a substantial number of registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through Magnachip’s website is not a part of, and is not incorporated into, this release.
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1 MXT LV MOSFET(Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s low-voltage MOSFET product family below 30V based on its latest trench process technology. |
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2 SSCFET®(Super-Short Channel FET): Magnachip’s MOSFET design technology that applies a minimized channel-length structure to achieve low on-resistance and high current capability. |
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Contacts
Mike Bishop
United States (Investor Relations)
Bishop IR, LLC
Tel. +1-415-891-9633
mike@bishopir.com
Kyeongah Cho
Global Marketing Communication
Magnachip Semiconductor
Tel. +82-2-6903-3179
pr@magnachip.com
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